| PART |
Description |
Maker |
| 2SD389A 2SD389AQ 2SD389P 2SD601 2SD601AR 2SD601AS |
Si NPN epitaxial planar. General amplifier.
Si NPN DIFFUSED JUNCTION MESA 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
Si NPN diffused juction mesa. Medium power amplifier.
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| PUMX1 |
40 V, 100 mA NPN/NPN general-purpose transistor
|
NXP Semiconductors
|
| BC846DS |
65 V, 100 mA NPN/NPN general-purpose transistor
|
NXP Semiconductors
|
| BC846BS |
100 MA NPN/NPN General-purpose Transistor
|
Philips Semiconductors
|
| BC184 BC184C BC184B |
0.350W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 100 - hFE
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
|
CDIL[Continental Device India Limited]
|
| BCF32 BCF32_3 |
NPN general purpose transistor 100 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR
From old datasheet system
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PUML1DG |
50 V, 200 mA NPN general-purpose transistor/100 mA NPN resistor-equipped transistor
|
NXP Semiconductors
|
| CIL351 CIL352 |
0.300W General Purpose NPN Metal Can Transistor. 70V Vceo, 0.200A Ic, 200 - 480 hFE.
0.300W General Purpose NPN Metal Can Transistor. 70V Vceo, 0.200A Ic, 100 - 250 hFE.
NPN SILICON PLANAR TRANSISTORS
|
Continental Device India Limited
|
| BC413B BC413C BC414B BC414C |
0.350W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.010A Ic, 180 - 460 hFE
0.350W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 100 - hFE
0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 100 - hFE
0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 380 - 800 hFE
|
Continental Device India Limited
|
| FTM3725 |
NPN General Purpose Amplifier
NPN Transistor 1200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, MS-012AC
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
